LNAFIN Oy Blog pages
LNAFIN Oy Blog pages have news, development notices and videos about our products and services such as PCBs, PCB Layout Design, PCB assembly and R&D services.
Published design data is either from our own R&D projects, or it has been included with customer permission.
Some featured posts:
MMIC Design Sheet: LNAFIN2 is a Q-band LNA
Esa Tiiliharju, doct.tech(EE), LNAFIN Oy, https://www.LNAFIN.com/, eti@LNAFIN.com
This web-page is re-production of a MMIC design sheet we have assembled for our Q-band LNA project. This chip has been recently fabricated and its simulated performance is shown in this post. The chip fabrication is part of our Q-band ESA project blogged here. The low-noise amplifier has 4-stages, and it has a simulated state-of-the-art performance with low Noise Figure (NF), high gain and good broadband 50-Ω matching.
- Circuit Name: LNAFIN2, Circuit Function: Q-Band Low-Noise Amplifier (LNA).
- MMIC size: 3×2 mm2.
- Foundry: Ommic 70-nm mHemt D007IH.
Stability verification example using the gprobe2-method. Circuit response is stable in all
loading conditions when probed values remain within -1. . . +1.
Simulated Performance Table
|Parameter ||Unit ||LNA#2 |
|Centre frequency ||GHz ||40.0 |
|Bandwidth ||GHz ||12.8 |
|Gain ||dB ||31.4 |
|Noise figure ||dB ||1.2 |
|Output 1-dB compression ||dBm ||4 |
|Input return loss ||dB ||22.4 |
|Output return loss ||dB ||21.9 |
|Stability || ||Unconditional |
|DC power consumption ||mW ||153.6 |
|Operating temperature ||°C ||-25 to +75 |
|PORT1 bw RL=18 dB ||GHz ||14.8 |
|PORT2 bw RL=20 dB ||GHz ||66.1 |
Note: linearity (1-dB compression) is limited by the small-signal models, which have
only few biasing points. We have done the large signal simulations with biasing points, which correspond to tabulated small-signal characteristics.
Simulated 2-port Characteristics
With this Christmas card our Best Wishes to All!
Many thanks for all our customers and for our collegues from behalf of LNAFIN Oy, Helsinki, Finland!
LNAFIN Oy Participates in Alihankinta 2016 Trade Fair
Alihankinta 2016 is the foremost international industry trade fair in Finland. Industrial subcontractors have been gathering to Tampere for years to gain visibility, new business contacts and new ideas. The Alihankinta fair is held annually in Tampere Exhibition and Sports Centre, Ilmailunkatu 20, 33900 Tampere, Finland. This year’s fair has attracted 1000 exhibitors from 20 countries. As a result of that, the exhibited products and services vary tremendously. However, Alihankinta Fair main product categories have been categorized as: production methods, products and components, R&D and design services plus ICT. Thus we feel that LNAFIN Oy PCB layout design, PCB deliveries, electronics assembly, R&D services, wirebonding, prototyping and RF design know-how has something to offer for Alihankinta 2016 visitors.
Visit LNAFIN at C430 and Win!
You will meet us in C-hall at our booth C430. We are very satisfied to have gotten a booth in this year’s outsold event. At the same time we wish that many fair goers would have an interest in electronics products and design services. We would be pleased to discuss circuit design and printed circuit board related prototyping/production needs. All booth visitors can take part in our small fair lottery. We will randomly draw winners to receive gift certificates for our products. Winners will be personally informed. We have included two maps of the area in this post: the blue map above shows the general exhibition area layout, whereas the black-and-white map below shows the C-hall exhibitor map.
LNAFIN Oy Trademark Registration Celebrates Exports to 6 Countries Worldwide
To celebrate our starting sixth year in business, we have registered our trademark (TM) at the Finnish Patents and Trademark office. Our trademark LNAFIN cube logo is shown here with the famous circled R-letter. Its basic idea is to combine words LNA and FIN in a graphic form. LNA stands for Low-Noise Amplifier, which is a key block in most radio systems. We have one US patent on LNA structures. As for FIN: that stands for Finland. LNAFIN Oy operates from Helsinki, Finland, and we also wanted to give credit to great Finnish RF and electronics engineers.
Growing customer base has been one of the key reasons for TM regisration. This Spring our export destination count reached 6 different countries such as: USA, Russia, Denmark, Great Britain etc. We appreciate our customers’ trust very much and we will live up to it in the future too. We have delivered various printed circuit board related products such as PCB design, PCB sales and electronics assembly services.
Updated 2016 version of the LNAFIN Oy company slides has been posted here, or the .pdf file can be directly downloaded here.
LNAFIN Oy now Adds Sprint 6.0 Files for accepted PCB Production Data
Sprint PCB layout design program is useful for the printed circuit designer who wants to layout designs directly without schematic entry or any such complexities. This simple productive tool offers professional PCB layout capabilities such as design reuse etc. and is thus very popular both in professional and hobbyist circles. In recognition of that, LNAFIN Oy has decided to start accepting native sprint files for PCB deliveries. These can also be used for prototype and series PCB assembly services when good Bill-of-Materials (BOM) is also included in the zip-file.
Several PCB Layout Programs Supported
LNAFIN Oy has long supported several PCB layout programs such as: Mentorgraphics PADS, Eagle, and KiCAD. PCB layout design services are also available using these tools as based on customer schematic files. The Sprint data format complements our previously supported express-PCB PCB production in the sense that both tools focus on layout-only PCB approach. Here’s the Sprint quick logo for those who recognize that better:
Dr. Mikko Varonen Becomes an Associate of LNAFIN Oy
Dr. Varonen has become a shareholder of LNAFIN Oy this February, 2015. His enrollment gives a substantial boost to our Monolithic Microwave Integrated Circuit (MMIC) design knowhow. Mikko’s background includes dozens of MMIC-circuits in different technologies (GaAs pHEMT and mHEMT, InP HEMT, nanometer CMOS). Some of the works he has contributed to have justifiably been noted. He has been referenced well over 350 times by his peers, and his journal article Journal publication in IEEE Journal of Solid-State Circuits entitled “Millimeter-wave integrated circuits in 65-nm CMOS” was the 24th most accessed publication in the IEEE Xplore in September 2008.
Broad Experience in Making Millimeter-wave Circuits
Mikko’s hands-on skills combined with his analytical approach have enabled him to make impressive work in various Millimeter-wave circuit implementation projects. Thus his prior experience includes such important circuits blocks as Monolithic Millimeter-Wave Active and Passive Components, Low-Noise Amplifiers (LNA), Power Amplifiers (PA), Resistive Mixers, and Radio Front-Ends.
Most importantly Mikko is an easy-going guy, who is popular with his collegues. Based on this and on his abilities as a researcher he has been able to become a visiting scientist in World’s top research institutes such as the NASA Jet Propulsion Laboratory in the USA or the Fraunhofer IAF in Germany. Currently he is also with the Aalto University, Espoo, Finland.
Waveguide Packaged MMIC LNA Design Draws Attention
LNAFIN Oy got featured in an NI (formerly AWR Corporation) design article in October 2014. The article is titled “LNAFIN Designs MMIC LNA Module for 40 GHz Space
Application Using NI AWR Design Environment.” The article features MMIC LNA design results, which were achieved recently so as to meet a very demanding Q-band LNA specification. Since the LNA is waveguide (WG) packaged, the design tasks include: design and optimization of the WG-to-PCB transitions, supporting PCB design and the MMIC design challenge itself. For example bonding wire compensation as part of the matching network has to be accomplished at the same time as a successful waveguide design is realized.
One designed WG-to-PCB transition has been shown in the attached figure. The figure includes 3D mesh which is utilized by the EM-simulator used (MWO Analyst). Low insertion loss results around 0.2 dB were obtained, which helps to achieve the specified NF-values towards 1 dB @40GHz. Yet at the same time gain should exceed 25 dB and the matched input and output bandwidths should be wide (>5 GHz).
The full article can be downloaded from the NI website at: